COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE

被引:117
作者
PIRRI, C [1 ]
PERUCHETTI, JC [1 ]
GEWINNER, G [1 ]
DERRIEN, J [1 ]
机构
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词
D O I
10.1103/PhysRevB.29.3391
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3391 / 3397
页数:7
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