COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE

被引：117

作者：

PIRRI, C ^{[1
]}

PERUCHETTI, JC ^{[1
]}

GEWINNER, G ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3391 / 3397

页数：7

共 38 条

[21] ANGLE-RESOLVED PHOTOEMISSION OF THE SI(111)7X7 SURFACE
HOUZAY, F
GUICHAR, GM
PINCHAUX, R
THIRY, P
PETROFF, Y
DAGNEAUX, D
[J]. SURFACE SCIENCE, 1980, 99 (01) : 28 - 33
[22] KUPPERS J, UNPUB
[23] MANY-BODY EFFECTS IN THE (111)-SILICON DANGLING-BOND SURFACE-STATES
LOUIS, E
FLORES, F
GUINEA, F
TEJEDOR, C
[J]. SOLID STATE COMMUNICATIONS, 1982, 44 (12) : 1633 - 1636
[24] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS
MURARKA, SP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792
[25] Poate J M, 1978, THIN FILMS INTERDIFF
[26] PROBING SURFACE PROPERTIES WITH ADSORBED METAL MONOLAYERS
RHEAD, GE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 603 - 608
[27] FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE
RINGEISEN, F
DERRIEN, J
DAUGY, E
LAYET, JM
MATHIEZ, P
SALVAN, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 546 - 552
[28] SI(111)-PT INTERFACE AT ROOM-TEMPERATURE - A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY
ROSSI, G
ABBATI, I
BRAICOVICH, L
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1982, 25 (06) : 3627 - 3636
[29] ELECTRONIC-STRUCTURE OF SILICIDE SILICON INTERFACES
RUBLOFF, GW
HO, PS
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 21 - 40
[30] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE
SAITOH, S
ISHIWARA, H
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205