REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[2] Aronsson B., 1965, BORIDES SILICIDES PH

[3] ARONSSON B, 1960, ARK KEMI, V16, P379

[4] ENHANCED OXIDATION OF MOLYBDENUM DISILICIDE UNDER TENSILE STRESS - RELATION TO PEST MECHANISMS [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (02): : 479 - &

[5] CHANG CC, UNPUBLISHED

[6] CHIU KW, UNPUBLISHED

[7] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[8] ELLIOTT RP, 1965, CONSTITUTION BINARY

[9] FERRIS SD, 1979, 1978 P C LAS SOL INT

[10] FITZER E, 1956, 2ND PLANS P SEM REUT

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[2] Aronsson B., 1965, BORIDES SILICIDES PH

[3] ARONSSON B, 1960, ARK KEMI, V16, P379

[4] ENHANCED OXIDATION OF MOLYBDENUM DISILICIDE UNDER TENSILE STRESS - RELATION TO PEST MECHANISMS [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (02): : 479 - &

[5] CHANG CC, UNPUBLISHED

[6] CHIU KW, UNPUBLISHED

[7] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[8] ELLIOTT RP, 1965, CONSTITUTION BINARY

[9] FERRIS SD, 1979, 1978 P C LAS SOL INT

[10] FITZER E, 1956, 2ND PLANS P SEM REUT