FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE

被引：65

作者：

RINGEISEN, F ^{[1
]}

DERRIEN, J ^{[1
]}

DAUGY, E ^{[1
]}

LAYET, JM ^{[1
]}

MATHIEZ, P ^{[1
]}

SALVAN, F ^{[1
]}

机构：

[1] FAC SCI LUMINY,DEPT PHYS,F-13288 MARSEILLE 9,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：546 / 552

页数：7

共 41 条

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