STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG

被引：85

作者：

BOLMONT, D

CHEN, P

SEBENNE, CA

PROIX, F

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.24.4552

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：4552 / 4559

页数：8

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