INTERACTION OF AG WITH SI(111)

被引：29

作者：

HOUSLEY, M ^{[1
]}

HECKINGBOTTOM, R ^{[1
]}

TODD, CJ ^{[1
]}

机构：

[1] PO RES CTR,IPSWICH IP5 7RE,ENGLAND

来源：

SURFACE SCIENCE | 1977年 / 68卷 / 01期

关键词：

D O I：

10.1016/0039-6028(77)90203-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：179 / 188

页数：10

共 17 条

[1] BAND STRUCTURE OF SILICON BY CHARACTERISTIC AUGER ELECTRON SPECTRUM ANALYSIS
AMELIO, GF
[J]. SURFACE SCIENCE, 1970, 22 (02) : 301 - &
[2] COMBINED AUGER-ELECTRON SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY
ASHWELL, GWB
TODD, CJ
HECKINGBOTTOM, R
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (05): : 435 - 438
[3] RECENT ADVANCES IN EPITAXY
BAUER, E
POPPA, H
[J]. THIN SOLID FILMS, 1972, 12 (01) : 167 - +
[4] TIGHT-BINDING CALCULATION OF A CORE-VALENCE VALENCE AUGER LINE-SHAPE - SI(111)
FEIBELMAN, PJ
MCGUIRE, EJ
PANDEY, KC
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (19) : 1154 - 1157
[5] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
[J]. SURFACE SCIENCE, 1973, 36 (01) : 109 - 122
[6] MODEL FOR AUGER-ELECTRON SPECTROSCOPY OF SYSTEMS EXHIBITING LAYER GROWTH, AND ITS APPLICATION TO DEPOSITION OF SILVER ON NICKEL
JACKSON, DC
GALLON, TE
CHAMBERS, A
[J]. SURFACE SCIENCE, 1973, 36 (02) : 381 - 394
[7] RELATIVE EFFECT OF EXTRA-ATOMIC RELAXATION ON AUGER AND BINDING-ENERGY SHIFTS IN TRANSITION-METALS AND SALTS
KOWALCZY.SP
LEY, L
MCFEELY, FR
POLLAK, RA
SHIRLEY, DA
[J]. PHYSICAL REVIEW B, 1974, 9 (02) : 381 - 391
[8] EPITAXY OF NOBLE-METALS AND (111) SURFACE SUPERSTRUCTURES OF SILICON AND GERMANIUM .1. STUDY AT ROOM-TEMPERATURE
LELAY, G
QUENTEL, G
FAURIE, JP
MASSON, A
[J]. THIN SOLID FILMS, 1976, 35 (03) : 273 - 287
[9] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS
LEY, L
SHIRLEY, DA
POLLAK, R
KOWALCZYK, S
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1088 - +
[10] EFFECT OF POLARIZATION OF ELECTRON-GAS ON ENERGIES OF AUGER TRANSITION IN METALS
MATTHEW, JAD
[J]. SURFACE SCIENCE, 1973, 40 (02) : 451 - 455

← 1 2 →