ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[4] CAPILLARITY AND STEP INTERACTIONS ON SOLID SURFACES [J]. SURFACE SCIENCE, 1971, 26 (01) : 321 - +

[5] CLABES J, TO BE PUBLISHED

[6] LEED FROM SURFACE STEPS ON UO2 SINGLE CRYSTALS [J]. SURFACE SCIENCE, 1968, 11 (01) : 82 - +

[7] SURFACE STUDIES BY ELECTRON DIFFRACTION [J]. SURFACE SCIENCE, 1971, 25 (01) : 1 - +

[8] STRAIN-INDUCED INHOMOGENEITY OF SURFACE POTENTIAL ON FRESHLY CLEAVED SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (24) : 1475 - &

[9] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[10] HEILAND G, 1961, FORTSCHR PHYS, V9, P393

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] BAUERLE F, 1972, J APPL PHYS, V43, P3917

[4] CAPILLARITY AND STEP INTERACTIONS ON SOLID SURFACES [J]. SURFACE SCIENCE, 1971, 26 (01) : 321 - +

[5] CLABES J, TO BE PUBLISHED

[6] LEED FROM SURFACE STEPS ON UO2 SINGLE CRYSTALS [J]. SURFACE SCIENCE, 1968, 11 (01) : 82 - +

[7] SURFACE STUDIES BY ELECTRON DIFFRACTION [J]. SURFACE SCIENCE, 1971, 25 (01) : 1 - +

[8] STRAIN-INDUCED INHOMOGENEITY OF SURFACE POTENTIAL ON FRESHLY CLEAVED SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (24) : 1475 - &

[9] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[10] HEILAND G, 1961, FORTSCHR PHYS, V9, P393