ELECTRONIC-STRUCTURE OF SILICIDE SILICON INTERFACES

被引：34

作者：

RUBLOFF, GW

HO, PS

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90089-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：21 / 40

页数：20

共 50 条

[1] ELECTRONIC-STRUCTURE OF COMPOUNDS AT PLATINUM - SILICON (III) INTERFACE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

BISI, O ;

ROVETTA, R .

SOLID STATE COMMUNICATIONS, 1981, 37 (02) :119-122

[2] THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE [J].

ABBATI, I ;

BRAICOVICH, L ;

DEMICHELIS, B ;

PENNINO, UD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1303-1305

[3]

Abbati I., 1980, Journal of the Physical Society of Japan, V49, P1071

[4] EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE [J].

ABBATI, I ;

ROSSI, G ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :636-640

[5]

ABBATI I, 1980, VIDE CONCHES MINCES, V201, P959

[6] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].

BISI, O ;

CALANDRA, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494

[7]

BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[8] LATTICE-LOCATION EXPERIMENT OF THE NI-SI INTERFACE BY THIN-CRYSTAL CHANNELING OF HELIUM-IONS [J].

CHEUNG, NW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1981, 46 (10) :671-674

[9] METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].

CHEUNG, NW ;

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MAYER, JW ;

ULLRICH, BM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923

[10] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

CHEUNG, NW ;

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ ;

WEST, KW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124

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