LATTICE-LOCATION EXPERIMENT OF THE NI-SI INTERFACE BY THIN-CRYSTAL CHANNELING OF HELIUM-IONS

被引：87

作者：

CHEUNG, NW ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91125 USA

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.46.671

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：671 / 674

页数：4

共 14 条

[1]

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[4]

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[5]

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[8] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].

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MAYER, JW .

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[9] LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI [J].

PICRAUX, ST ;

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[10]

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