NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE

被引:96
作者
CHEUNG, NW [1 ]
CULBERTSON, RJ [1 ]
FELDMAN, LC [1 ]
SILVERMAN, PJ [1 ]
WEST, KW [1 ]
MAYER, JW [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1103/PhysRevLett.45.120
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:120 / 124
页数:5
相关论文
共 16 条
  • [1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
    ANDREWS, JM
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
  • [2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
    BARDEEN, J
    [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
  • [3] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING
    CHEUNG, NW
    FELDMAN, LC
    SILVERMAN, PJ
    STENSGAARD, I
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 859 - 861
  • [4] INTERFACIAL ORDER IN EPITAXIAL NISI2
    CHIU, KCR
    POATE, JM
    FELDMAN, LC
    DOHERTY, CJ
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547
  • [5] CULBERTSON RJ, UNPUBLISHED
  • [6] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE
    FELDMAN, LC
    SILVERMAN, PJ
    WILLIAMS, JS
    JACKMAN, TE
    STENSGAARD, I
    [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399
  • [7] FELDMAN LC, SURFACE SCI RECENT P
  • [8] FELDMAN LC, 1978, 1978 P INT C PHYS SI, P339
  • [9] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
    FREEOUF, JL
    RUBLOFF, GW
    HO, PS
    KUAN, TS
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
  • [10] HEINE V, 1965, PHYSICAL REVIEW A, V138, P1189