NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE

被引：96

作者：

CHEUNG, NW ^{[1
]}

CULBERTSON, RJ ^{[1
]}

FELDMAN, LC ^{[1
]}

SILVERMAN, PJ ^{[1
]}

WEST, KW ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 45卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.45.120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：120 / 124

页数：5

相关论文

共 16 条

[11] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
HIRAKI, A
SHUTO, K
KIM, S
KAMMURA, W
IWAMI, M
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612
[12] DYNAMICAL OBSERVATION OF ROOM-TEMPERATURE INTERFACIAL REACTION IN METAL-SEMICONDUCTOR SYSTEM BY AUGER-ELECTRON SPECTROSCOPY
HIRAKI, A
KIM, S
KAMMURA, W
IWAMI, M
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 706 - 710
[13] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .1. SURFACE PLASMONS AND ELECTRON-ELECTRON SCREENED INTERACTION
INKSON, JC
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (18): : 2599 - &
[14] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS
OTTAVIANI, G
TU, KN
MAYER, JW
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 284 - 287
[15] RHODEICK EH, 1978, METAL SEMICONDUCTOR, P176
[16] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324