INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS

被引：114

作者：

OTTAVIANI, G

TU, KN

MAYER, JW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CALTECH,PASADENA,CA 91125

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.44.284

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：284 / 287

页数：4

相关论文

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