ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS

被引：159

作者：

HIRAKI, A ^{[1
]}

SHUTO, K ^{[1
]}

KIM, S ^{[1
]}

KAMMURA, W ^{[1
]}

IWAMI, M ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 09期

关键词：

D O I：

10.1063/1.89799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：611 / 612

页数：2

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[J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &
[2] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES
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[3] LOW-TEMPERATURE DIFFUSION OF AU INTO SI IN SI(SUBSTRATE)-AU(FILM) SYSTEM
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HIRAKI, A
[J]. THIN SOLID FILMS, 1975, 25 (02) : 423 - 430
[4] DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM
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HIRAKI, A
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 389 - 390