THE SI(111)-PD INTERFACE - SPECTROSCOPIC EVIDENCE OF CHEMICAL PROCESSES AT LIQUID-NITROGEN TEMPERATURE

被引:24
作者
ABBATI, I [1 ]
BRAICOVICH, L [1 ]
DEMICHELIS, B [1 ]
PENNINO, UD [1 ]
机构
[1] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 06期
关键词
Compendex;
D O I
10.1116/1.570659
中图分类号
O59 [应用物理学];
学科分类号
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:1303 / 1305
页数:3
相关论文
共 11 条
  • [1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES
    ABBATI, I
    BRAICOVICH, L
    FRANCIOSI, A
    LINDAU, I
    SKEATH, PR
    SU, CY
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 930 - 935
  • [2] ABBATI I, SOLID STATE COMMUN
  • [3] ABBATI I, 1980, ELECTROCHEM SOC, V80, P130
  • [4] ABBATI I, 1979, NOV C PHYS SEM SURF
  • [5] ABBATI I, 1980, 15TH C PHYS SEM KYOT
  • [6] BRAICOVICH I, 1980, J VAC SCI TECHNOL, V17, P1005
  • [7] CHYE PW, 1978, PHYSICAL REV B, V17, P2882
  • [8] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
    FREEOUF, JL
    RUBLOFF, GW
    HO, PS
    KUAN, TS
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
  • [9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION
    HO, PS
    TAN, TY
    LEWIS, JE
    RUBLOFF, GW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124
  • [10] OELHAFEN P, 1979, SOLID STATE COMMUN, V30, P641, DOI 10.1016/0038-1098(79)90113-3