FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2

被引：64

作者：

CHEN, LJ

MAYER, JW

TU, KN

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90098-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 141

页数：7

共 14 条

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POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[2] LATTICE IMAGING OF SILICIDE SILICON INTERFACES [J].

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MAYER, JW ;

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SHENG, TT .

THIN SOLID FILMS, 1982, 93 (1-2) :91-97

[3]

CHEN LJ, UNPUB APPL SURF SCI

[4] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J].

CHIU, KCR ;

POATE, JM ;

ROWE, JE ;

SHENG, TT ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :988-990

[5]

FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[6]

FOLL H, 1981, J APPL PHYS, V52, P250

[7]

ISHIWARA H, 1980, 1979 P S THIN FILM I, P159

[8] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS [J].

LAU, SS ;

MAYER, JW ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4005-4010

[9] EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J].

LAU, SS ;

CHEUNG, NW .

THIN SOLID FILMS, 1980, 71 (01) :117-127

[10] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].

SAITOH, S ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205

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