INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS

被引：170

作者：

LAU, SS ^{[1
]}

MAYER, JW ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.325359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4005 / 4010

页数：6

共 21 条

[1] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
CHU, WK
LAU, SS
MAYER, JW
MULLER, H
[J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402
[2] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS
CHU, WK
MAYER, JW
NICOLET, MA
BUCK, TM
AMSEL, G
EISEN, F
[J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41
[3] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES
COE, DJ
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
[4] Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]
[5] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[6] Karapet'yants M K H, 1970, THERMODYNAMIC CONSTA
[7] KUBASCHEWSKI O, 1956, THERMOCHEMICAL DATA
[8] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION
LAU, SS
CHU, WK
MAYER, JW
TU, KN
[J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213
[9] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES
LAU, SS
FENG, JSY
OLOWOLAFE, JO
NICOLET, MA
[J]. THIN SOLID FILMS, 1975, 25 (02) : 415 - 422
[10] MAYER JW, 1974, JPN J APPL PHYS, V2, P669