EVOLUTION OF THE DENSITY OF STATES PROFILE ABOVE MIDGAP IN A-SIGE-H ALLOYS FROM COMPLEMENTARY TRANSPORT MEASUREMENTS

被引:3
作者
GODET, C
LABDI, A
KLEIDER, JP
MENCARAGLIA, D
DJEBBOUR, Z
机构
[1] UNIV PARIS 11,ECOLE SUPER ELECT,F-91192 GIF SUR YVETTE,FRANCE
[2] UNIV PARIS 06,LAB GENIE ELECT PARIS,CNRS,URA D0127,F-91192 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1016/0022-3093(89)90641-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:534 / 536
页数:3
相关论文
共 12 条
[1]  
Bauer G. H., 1988, Eighth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR 11780), P729
[2]   STUDIES OF THE DENSITY OF STATES AT THE BAND EDGES AND IN THE PSEUDO-GAP IN A-SIGE-H ALLOYS BY COMBINED PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND X-RAY SPECTROSCOPY [J].
CHAHED, L ;
GHEORGHIU, A ;
THEYE, ML ;
ARDELEAN, I ;
SENEMAUD, C ;
GODET, C .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :471-473
[3]  
Chahed L., 1988, Eighth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR 11780), P846
[4]   A NEW TREATMENT OF SCHOTTKY-BARRIER CAPACITANCE-VOLTAGE CHARACTERISTICS - DISCUSSION OF USUAL ASSUMPTIONS AND DETERMINATION OF THE DEEP GAP STATES DENSITY IN A-SI1-XGEX-H ALLOYS [J].
KLEIDER, JP ;
MENCARAGLIA, D ;
DJEBBOUR, Z .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :432-434
[5]   CONDUCTION PROPERTIES OF THIN N+/I/N+ A-SI-H STRUCTURES [J].
LABDI, A ;
DEROSNY, G ;
EQUER, B .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :399-401
[6]  
LABDI A, 1988, THESIS U PARIS 7
[7]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320
[8]  
Sardin G., 1988, Eighth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR 11780), P776
[9]   URBACH TAIL AND GAP STATES IN HYDROGENATED A-SIC AND A-SIGE ALLOYS [J].
SKUMANICH, A ;
FROVA, A ;
AMER, NM .
SOLID STATE COMMUNICATIONS, 1985, 54 (07) :597-601
[10]  
STUTZMANN M, IN PRESS J APPL PHYS