A NEW TREATMENT OF SCHOTTKY-BARRIER CAPACITANCE-VOLTAGE CHARACTERISTICS - DISCUSSION OF USUAL ASSUMPTIONS AND DETERMINATION OF THE DEEP GAP STATES DENSITY IN A-SI1-XGEX-H ALLOYS

被引：19

作者：

KLEIDER, JP ^{[1
]}

MENCARAGLIA, D ^{[1
]}

DJEBBOUR, Z ^{[1
]}

机构：

[1] UNIV PARIS 11,ECOLE SUPER ELECT,F-91192 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90608-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：432 / 434

页数：3

共 11 条

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