MORE THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER

被引：28

作者：

ARCHIBALD, IW

ABRAM, RA

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 05期

关键词：

D O I：

10.1080/13642818608236858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：421 / 438

页数：18

共 14 条

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