ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS

[1] BAKER WD, 1972, J APPL PHYS, V45, P5152

[2] CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 203 - 214

[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[5] BURKEY BC, UNPUBLISHED

[6] COPELAND JA, 1966, IEEE T ELECTRON DEVI, V16, P445

[7] FISCHER JR, 1974, B AM PHYS SOC, V19, P299

[8] PHOTOELECTRONIC PROPERTIES OF P-ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1708 - 1718

[9] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[10] GLOVER HG, 1972, IEEE T ELECTRON DEVI, V19, P138

[1] BAKER WD, 1972, J APPL PHYS, V45, P5152

[2] CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 203 - 214

[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +

[5] BURKEY BC, UNPUBLISHED

[6] COPELAND JA, 1966, IEEE T ELECTRON DEVI, V16, P445

[7] FISCHER JR, 1974, B AM PHYS SOC, V19, P299

[8] PHOTOELECTRONIC PROPERTIES OF P-ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1708 - 1718

[9] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[10] GLOVER HG, 1972, IEEE T ELECTRON DEVI, V19, P138