A THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER

被引：32

作者：

ARCHIBALD, IW

ABRAM, RA

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 48卷 / 02期

关键词：

D O I：

10.1080/13642818308226465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：111 / 125

页数：15

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[1] A THEORY OF CAPACITANCE-VOLTAGE MEASUREMENTS ON AMORPHOUS-SILICON SCHOTTKY BARRIERS
ABRAM, RA
DOHERTY, PJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (02): : 167 - 176
[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
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[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
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HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[4] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS
LOSEE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2204 - 2214
[5] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03): : 303 - 317
[6] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
VIKTOROVITCH, P
MODDEL, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4847 - 4854