STUDIES OF THE FREQUENCY-DEPENDENT ADMITTANCES OF SCHOTTKY BARRIERS FORMED ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON

被引：31

作者：

GIBB, IG ^{[1
]}

LONG, AR ^{[1
]}

机构：

[1] UNIV GLASGOW,COLL NAT PHILOSOPHY,GLASGOW G12 8QQ,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 06期

关键词：

D O I：

10.1080/13642818408227646

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：565 / 595

页数：31

共 29 条

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[3] OBSERVATION OF ELECTRON AND HOLE TRAPS IN HYDROGENATED AMORPHOUS-SILICON BY VOLTAGE-EXCITED AND LASER-EXCITED DEEP LEVEL TRANSIENT SPECTROSCOPY
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[4] STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS
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[6] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS
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[7] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
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[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454
[8] INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES
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BRODSKY, MH
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1414 - 1421
[9] GIBB IG, 1983, THESIS U GLASGOW
[10] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
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FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165

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