OBSERVATION OF ELECTRON AND HOLE TRAPS IN HYDROGENATED AMORPHOUS-SILICON BY VOLTAGE-EXCITED AND LASER-EXCITED DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：19

作者：

COHEN, JD

LANG, DV

HARBISON, JP

BEAN, JC

机构：

来源：

SOLAR CELLS | 1980年 / 2卷 / 03期

关键词：

D O I：

10.1016/0379-6787(80)90036-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：331 / 347

页数：17

共 23 条

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[3] BIEGELSEN DK, 1978, PHILOS MAG B, V37, P477, DOI 10.1080/01418637808225791
[4] CODY GD, 1979, B AM PHYS SOC, V24, P400
[5] PHOTOCONDUCTIVITY AND TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
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[J]. SOLAR CELLS, 1980, 2 (03): : 289 - 300
[7] HIROSE H, 1979, APPL PHYS LETT, V34, P234
[8] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE IN DOPED AMORPHOUS SILICON
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BIEGELSEN, DK
SOLOMON, I
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (02) : 133 - 137
[9] Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9
[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032