STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS

被引：19

作者：

COHEN, JD

LANG, DV

HARBISON, JP

SERGENT, AM

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

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D O I：

10.1051/jphyscol:1981479

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学科分类号：

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页码：371 / 374

页数：4

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[1] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
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