INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS

被引：147

作者：

SOLOMON, I ^{[1
]}

DIETL, T ^{[1
]}

KAPLAN, D ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1978年 / 39卷 / 11期

关键词：

D O I：

10.1051/jphys:0197800390110124100

中图分类号：

学科分类号：

摘要：

引用

页码：1241 / 1246

页数：6

共 14 条

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