PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON

被引：201

作者：

ANDERSON, DA ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期

关键词：

D O I：

10.1080/14786437708239749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：695 / 712

页数：18

共 17 条

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[4]

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[6]

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[7] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

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[8]

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[9]

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[10] PHOTO AND DARK CONDUCTIVITY OF DOPED AMORPHOUS SILICON [J].

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