SPIN-DEPENDENT PHOTOCONDUCTIVITY IN N-TYPE AND P-TYPE AMORPHOUS SILICON

被引：73

作者：

SOLOMON, I

BIEGELSEN, D

KNIGHTS, JC

机构：

[1] ECOLE POLYTECH,PHYS MATIERE CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1016/0038-1098(77)91402-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：505 / 508

页数：4

共 12 条

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[2] AMORPHOUS SILICON SOLAR-CELL
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[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
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[4] KNIGHTS JC, 1976, STRUCTURE EXCITATION, P296
[5] KNIGHTS JC, TO BE PUBLISHED
[6] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[7] LECOMBER PG, 1976, STRUCTURE EXCITATION, P284
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[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 436 - &
[10] LOW-TEMPERATURE OXIDATION OF SILICON STUDIED BY PHOTOSENSITIVE ESR AND AUGER-ELECTRON SPECTROSCOPY
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 26 - 29