LOW-TEMPERATURE OXIDATION OF SILICON STUDIED BY PHOTOSENSITIVE ESR AND AUGER-ELECTRON SPECTROSCOPY

被引：21

作者：

RUZYLLO, J ^{[1
]}

SHIOTA, I ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132758

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：26 / 29

页数：4

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[7] SHIOTA I, 1974, JPN J APPL PHYS, P417
[8] [No title captured]
[9] [No title captured]