INVESTIGATION OF PASSIVATION MECHANISM IN SILICON SURFACES BY ELECTRON-SPIN RESONANCE

被引：31

作者：

SHIOTA, I ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

SURFACE SCIENCE | 1973年 / 36卷 / 02期

关键词：

D O I：

10.1016/0039-6028(73)90391-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：414 / 429

页数：16

相关论文

共 31 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
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[4] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2
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[5] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
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[J]. SURFACE SCIENCE, 1970, 23 (02) : 432 - &
[7] EFFECTS OF BULK DOPING ON ESR SIGNAL OF CLEAN SI SURFACES
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (02) : 475 - &
[8] PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1879 - &
[9] SPIN RESONANCE OF DONORS IN SILICON
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[J]. PHYSICAL REVIEW, 1954, 94 (05): : 1392 - 1393
[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

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