EFFECTS OF BULK DOPING ON ESR SIGNAL OF CLEAN SI SURFACES

被引：23

作者：

CHUNG, MF

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 02期

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D O I：

10.1016/0022-3697(71)90032-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

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页码：475 / &

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共 14 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
ALLEN, FG
GOBELI, GW
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
[2] SURFACE STATES ON CLEAVED (111) SILICON SURFACES
ASPNES, DE
HANDLER, P
[J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &
[3] PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE
CHUNG, MF
HANEMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1879 - &
[4] GRANT JTP, 1969, SURF SCI, V15, P42
[5] ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON
HANEMAN, D
[J]. PHYSICAL REVIEW, 1968, 170 (03): : 705 - &
[6] HANEMAN D, 1968, 4 INT MAT S BERK
[7] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES
LANDER, JJ
GOBELL, GW
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2298 - +
[8] ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES
MAEKAWA, S
KINOSHIT.N
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (08) : 1447 - &
[9] Many A., 1965, SEMICONDUCTOR SURFAC
[10] RAPID, PRECISE MEASUREMENTS OF KRYPTON ADSORPTION AND THE SURFACE AREA OF COARSE PARTICLES
ROSENBERG, AJ
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1956, 78 (13) : 2929 - 2934