STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1.

被引：306

作者：

NISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 01期

关键词：

D O I：

10.1143/JJAP.10.52

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：52 / +

页数：1

共 20 条

[1]

BALK P, CITED INDIRECTLY

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[3] TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS [J].

BURKHARD.PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :196-&

[4] PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE [J].

CHUNG, MF ;

HANEMAN, D .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1879-&

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[7]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8]

KOMIYA Y, 1970, SPR IECE JAP M TOK U

[9]

KOOI E, 1967, SURFACE PROPERTIES O

[10]

LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35

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