LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON

被引：41

作者：

JOUSSE, D ^{[1
]}

BASSET, R ^{[1
]}

DELIONIBUS, S ^{[1
]}

BOURDON, B ^{[1
]}

机构：

[1] CRCGE,LAB MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE

来源：

关键词：

D O I：

10.1063/1.91827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：208 / 211

页数：4

共 15 条

[1] ADLER D, 1978, PHYS REV LETT, V41, P1775
[2] ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[3] SPECTRAL RESPONSE OF METAL-AMORPHOUS SILICON BARRIERS AND HOLE DRIFT MOBILITY
BASSET, R
VIKTOROVITCH, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : 495 - 499
[4] BOURDON B, 1977, 6TH P INT C CHEM VAP, P220
[5] Carlson D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P893
[6] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON
FISCH, R
LICCIARDELLO, DC
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891
[7] LIGHT-INDUCED AGING EFFECTS IN SCHOTTKY DIODES ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SIH) - INTERPRETATION OF THE PHOTO-VOLTAIC STABILITY
JOUSSE, D
VIKTOROVITCH, P
VIEUXROCHAZ, L
CHENEVASPAULE, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 767 - 772
[8] JOUSSE D, 1979, THESIS GRENOBLE U
[9] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
DIETL, T
KAPLAN, D
[J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246
[10] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294