ADMITTANCE FREQUENCY-DEPENDENCE OF SCHOTTKY BARRIERS FORMED ON DC TRIODE SPUTTERED AMORPHOUS-SILICON - HYDROGEN INFLUENCE ON DEEP GAP STATE CHARACTERISTICS

被引：20

作者：

MENCARAGLIA, D ^{[1
]}

AMARAL, A ^{[1
]}

KLEIDER, JP ^{[1
]}

机构：

[1] UNIV PARIS 11,ECOLE SUPER ELECT,CNRS,LAB GENIE ELECT PARIS 127,F-91190 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1292 / 1301

页数：10

共 21 条

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