CAPACITANCE TEMPERATURE ANALYSIS OF MIDGAP STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：24

作者：

JOUSSE, D

DELEONIBUS, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4001 / 4007

页数：7

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