CAPACITANCE TEMPERATURE ANALYSIS OF MIDGAP STATES IN HYDROGENATED AMORPHOUS-SILICON

被引:24
作者
JOUSSE, D
DELEONIBUS, S
机构
关键词
D O I
10.1063/1.332580
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4001 / 4007
页数:7
相关论文
共 34 条
[1]   ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 42 (1-3) :315-333
[2]   EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].
ASHOK, S ;
LESTER, A ;
FONASH, SJ .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202
[3]   POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS [J].
AUSTIN, IG ;
MOTT, NF .
ADVANCES IN PHYSICS, 1969, 18 (71) :41-+
[4]   STUDY OF THE ELECTRONIC-STRUCTURE OF A-SI-H BY TUNNELING [J].
BALBERG, I .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :605-610
[5]  
BASSET R, 1980, 3RD P PHOT SOL EN C, P815
[6]   CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].
BEICHLER, J ;
FUHS, W ;
MELL, H ;
WELSCH, HM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :587-592
[7]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[8]   CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].
COHEN, JD ;
LANG, DV .
PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350
[9]   ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS [J].
DELEONIBUS, S ;
JOUSSE, D .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :487-490
[10]  
DELEONIBUS S, 1982, THESIS PARIS U