ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS

被引：17

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 42卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(80)90033-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：315 / 333

页数：19

相关论文

共 58 条

[1] AMORPHOUS-SEMICONDUCTOR DEVICES
ADLER, D
[J]. SCIENTIFIC AMERICAN, 1977, 236 (05) : 36 - 48
[2] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS
ADLER, D
SHUR, MS
SILVER, M
OVSHINSKY, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3289 - 3309
[3] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758
[4] DEFECTS IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 819 - 824
[5] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200
[6] ELECTRICAL CONDUCTIVITY IN DISORDERED SYSTEMS
ADLER, D
FLORA, LP
SENTURIA, SD
[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (01) : 9 - 12
[7] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS
ADLER, D
HENISCH, HK
MOTT, N
[J]. REVIEWS OF MODERN PHYSICS, 1978, 50 (02) : 209 - 220
[8] ADLER D, SOLAR CELLS
[9] AGARWAL SC, 1973, PHYS REV B, V7, P685
[10] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16

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