DEFECTS IN AMORPHOUS-SEMICONDUCTORS

被引：58

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90301-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：819 / 824

页数：6

共 10 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758
[2] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200
[3] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[4] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[5] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
STROM, U
TAYLOR, PC
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2278 - 2294
[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[8] STATES IN GAP IN GLASSY SEMICONDUCTORS
STREET, RA
MOTT, NF
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296
[9] PARAMAGNETIC STATES INDUCED IN AMORPHOUS AS, SE, AND AS2SE3 BY ELECTRON-BOMBARDMENT AT 77-K
TAYLOR, PC
STROM, U
BISHOP, SG
[J]. PHYSICAL REVIEW B, 1978, 18 (01): : 511 - 515
[10] CALCULATION OF DEFECT STATES IN AMORPHOUS SELENIUM
VANDERBILT, D
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (15) : 1012 - 1015

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