AMORPHOUS-SEMICONDUCTOR DEVICES

被引：89

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

SCIENTIFIC AMERICAN | 1977年 / 236卷 / 05期

关键词：

D O I：

10.1038/scientificamerican0577-36

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

收藏

页码：36 / 48

页数：13

相关论文

共 6 条

[1] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[2] MOTT NF, 1971, ELECTRONIC PROCESSES
[3] AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS
OVSHINSK.SR
FRITZSCH.H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) : 91 - 105
[4] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[5] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472
[6] STATE OF AMORPHOUS THRESHOLD SWITCHES
PETERSEN, KE
ADLER, D
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 256 - 263