RESONANT RAMAN STUDIES OF STRUCTURAL ORDERING IN HG1-XCDXTE - DEPENDENCE ON GROWTH-CONDITIONS

被引：17

作者：

COMPAAN, A

BOWMAN, RC

COOPER, DE

机构：

[1] AEROSPACE CORP,CHEM & PHYS LAB,LOS ANGELES,CA 90009

[2] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant Raman scattering with photon energies between 2.35 and 2.7 eV has been used to study both the alloy composition and local structural order in Hg1-xCdxTe for x values near 0.25 and for samples prepared by bulk growth, liquid phase epitaxy, molecular beam epitaxy, and metalorganic chemical vapor deposition. The resonance behavior of the HgTe-like transverse optical and longitudinal optical (LO) modes, the CdTe-like LO mode, and that of an additional mode probably due to preferential clustering of three Hg and one Cd about the Te sites, all indicate strong enhancement at the E1 edge. However, surfaces annealed with a Nd:yttrium-aluminum-garnet-pumped dye laser show strong suppression of the cluster mode (but not the LO mode) in all samples, which suggests that extremely rapid epitaxial regrowth may inhibit the 3:1 cluster formation.

引用

页码：1055 / 1057

页数：3

共 23 条

[1] PHOTOREFLECTANCE IN NARROW-GAP HG1-XCDXTE AND HG1-YZNYTE [J].

AMIRTHARAJ, PM ;

KENNEDY, JJ ;

BOYD, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3184-3185

[2] PHOTOREFLECTANCE STUDY OF HG0.7CD0.3 TE AND CD1-XZNX TE - E1 TRANSITION [J].

AMIRTHARAJ, PM ;

DINAN, JH ;

KENNEDY, JJ ;

BOYD, PR ;

GLEMBOCKI, OJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2028-2033

[3] RAMAN-SCATTERING STUDY OF THE PROPERTIES AND REMOVAL OF EXCESS TE ON CDTE SURFACES [J].

AMIRTHARAJ, PM ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :789-791

[4] RAMAN CHARACTERIZATION OF HG1-XCDXTE AND RELATED MATERIALS [J].

AMIRTHARAJ, PM ;

TIONG, KK ;

PARAYANTHAL, P ;

POLLAK, FH ;

FURDYNA, JK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :226-232

[5] NONDESTRUCTIVE ANALYSIS OF HG1-XCDXTE(X=0.00,0.20,0.29, AND 1.00) BY SPECTROSCOPIC ELLIPSOMETRY .2. SUBSTRATE, OXIDE, AND INTERFACE PROPERTIES [J].

ARWIN, H ;

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1316-1323

[6]

ASPNES DE, 1984, J VAC SCI TECHNOL A, V2, P1309, DOI 10.1116/1.572400

[7] ELECTROLYTE ELECTROREFLECTANCE OF HGCDTE AT LOW-TEMPERATURES [J].

BERLOUIS, LEA ;

PETER, LM ;

ASTLES, MG ;

HUMPHREYS, RG .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :502-504

[8] ORDERING-INDUCED CHANGES IN THE OPTICAL-SPECTRA OF SEMICONDUCTOR ALLOYS [J].

BERNARD, JE ;

WEI, SH ;

WOOD, DM ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1988, 52 (04) :311-313

[9]

CARDONA M, 1982, TOP APPL PHYS, V50, P19

[10] PHONON POPULATIONS BY NANOSECOND-PULSED RAMAN-SCATTERING IN SI [J].

COMPAAN, A ;

LEE, MC ;

TROTT, GJ .

PHYSICAL REVIEW B, 1985, 32 (10) :6731-6741

← 1 2 3 →