FORMATION AND PROPERTIES OF CUBIC BORON-NITRIDE FILMS ON TUNGSTEN CARBIDE BY PLASMA CHEMICAL VAPOR-DEPOSITION

被引：28

作者：

OKAMOATO, M

UTSUMI, Y

OSAKA, Y

机构：

[1] Department of Electrical Engineering, Hiroshima University, Higashihiroshima, Hiroshima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 10期

关键词：

CUBIC BORON NITRIDE; NEGATIVE SELF-BIAS; BUFFER LAYER OF BORON (B) FILM; INFRARED REFLECTANCE POLARIZATION SPECTRA; TRANSMISSION ELECTRON MICROSCOPY (TEM); TRANSMISSION ELECTRON DIFFRACTION (TED);

D O I：

10.1143/JJAP.31.3455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron nitride (BN) films could be deposited on tungsten carbide (WC) using the plasma chemical vapor deposition (CVD) technique. The deposited films are characterized by infrared reflectance polarization spectroscopy, transmission electron microscopy (TEM) and transmission electron diffraction (TED). The BN films directly deposited on WC were a mixture of cubic and hexagonal phases. However, the predominant films in the cubic phase were only formed with use of a thin buffer layer of boron (B) films. The grain size was estimated to be about 100 angstrom from images of TEM and TED patterns.

引用

页码：3455 / 3460

页数：6

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