ELECTRONIC-TRANSITIONS IN ASIMGEN STRAINED MONOLAYER SUPERLATTICE MEASURED BY PHOTOREFLECTANCE

被引:7
作者
DAFESH, PA [1 ]
ARBET, V [1 ]
WANG, KL [1 ]
机构
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024
关键词
D O I
10.1063/1.103158
中图分类号
O59 [应用物理学];
学科分类号
摘要
The first photoreflectance spectrum from a short-period strain-symmetrized SimGen superlattice has been measured at 87 K. Fifteen electronic transitions were measured between 1.1 and 2.7 eV and fit well to a third derivative functional form. Most of the transition energies were calculated using a one-band envelope-function model, adding strain and spin orbit shifts as first-order corrections. Additional transitions were observed near the expected interband energies in an unstrained Si0.2Ge 0.8 random alloy. All of the calculated transition energies were found to agree to within 80 meV of the measured values.
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页码:1498 / 1500
页数:3
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