DEPOLARIZATION FIELDS IN THIN FERROELECTRIC FILMS

被引：430

作者：

MEHTA, RR

SILVERMAN, BD

JACOBS, JT

机构：

[1] IBM CORP, GEN PROD DIV, SAN JOSE, CA 95193 USA

[2] IBM CORP, RES DIV, SAN JOSE, CA 95193 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.1662770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3379 / 3385

页数：7

共 32 条

[1] PERFORMANCE OF SPUTTERED PB0.92BI0.07LA0.01 (FE0.405NB0.325ZR0.27)O3FERROELECTRIC MEMORY FILMS [J].

ATKIN, RB .

FERROELECTRICS, 1972, 3 (2-3-) :213-&

[2] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J].

BENDANIEL, DJ ;

DUKE, CB .

PHYSICAL REVIEW, 1966, 152 (02) :683-+

[3] DESIGN AND PERFORMANCE OF A THIN-FILM FERROELECTRIC-PHOTOCONDUCTOR STORAGE DEVICE [J].

CHAPMAN, DW ;

MEHTA, RR .

FERROELECTRICS, 1972, 3 (2-3-) :101-&

[4] SOME THIN-FILM PROPERTIES OF A NEW FERROELECTRIC COMPOSITION [J].

CHAPMAN, DW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2381-&

[5] CERAMIC FERROELECTRIC FIELD EFFECT STUDIES [J].

CRAWFORD, JC ;

ENGLISH, FL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) :525-&

[6] DOMAIN STATISTICS AND FERROELECTRIC TRANSIENTS [J].

DALTON, NW ;

JACOBS, JT ;

SILVERMAN, BD .

FERROELECTRICS, 1971, 2 (01) :21-+

[7] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[8] ON THE DEPENDENCE OF THE SWITCHING TIME OF BARIUM TITANATE CRYSTALS ON THEIR THICKNESS [J].

DROUGARD, ME ;

LANDAUER, R .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1663-1668

[9]

Fomenko V S., 1966, HDB THERMIONIC PROPE

[10] RESEARCH STATUS AND DEVICE POTENTIAL OF FERROELECTRIC THIN-FILMS [J].

FRANCOMBE, MH .

FERROELECTRICS, 1972, 3 (2-3-) :199-+

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