STRUCTURE AND ELECTRONIC TRANSPORT OF HIGHLY CONDUCTIVE LANGMUIR-BLODGETT-FILMS OF TRIDECYLMETHYLAMMONIUM-AU(DMIT)2

被引:37
作者
MIURA, YF [1 ]
TAKENAGA, M [1 ]
KASAI, A [1 ]
NAKAMURA, T [1 ]
MATSUMOTO, M [1 ]
KAWABATA, Y [1 ]
机构
[1] NATL CHEM LAB IND,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12A期
关键词
CONDUCTIVE LB FILMS; TRIDECYLMETHYLAMMONIUM-AU(DMIT)2; ELECTRICAL CONDUCTIVITY; THERMOELECTRIC POWER; ELECTROCHEMICAL OXIDATION; VARIABLE RANGE HOPPING;
D O I
10.1143/JJAP.30.3503
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic transport measurements are reported for Langmuir-Blodgett (LB) films of tridecylmethylammonium-Au(dmit)2 for 300-4 K. The conductivity after electrochemical oxidation is 30-50 S/cm at room temperature, increases with decreasing temperature, and begins decrease at about 200 K. The conductivity at lower temperatures is explained by two-dimensional variable range hopping (2D VRH). The thermoelectric power (S) is positive and well fitted by a linear combination of the temperature dependence of 2D VRH (S(v) is-proportional-to T1/3) and that of metal (S(m) is-proportional-to T). These results can be explained by a model in which highly conductive metallic regions are separated by thin weakly conductive regions. The UV/visible absorption spectra and the X-ray diffraction patterns indicate that a large structural change occurs accompanied by electrochemical oxidation.
引用
收藏
页码:3503 / 3509
页数:7
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