CAPTURE AND EMISSION OF CARRIERS IN SEMICONDUCTOR QUANTUM-WELLS

被引：26

作者：

YASSIEVICH, IN

SCHMALZ, K

BEER, M

机构：

[1] INST SEMICOND PHYS,O-1200 FRANKFURT,GERMANY

[2] PAUL DRUDE INST SOLID STATE ELECT,O-1086 BERLIN,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 10期

关键词：

D O I：

10.1088/0268-1242/9/10/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface capture velocity is introduced as a new parameter which should be used to describe the capture and emission processes of carriers in quantum wells. A calculation of the surface velocity is presented for deformation and polarization types of carrier interaction with optical phonons. The dependence of the capture velocity on the free carrier kinetic energy and/or quantum well parameters is investigated. Application of the theory is illustrated with the capture of holes in Si/Si0.8Ge0.2/Si quantum wells.

引用

页码：1763 / 1774

页数：12

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