CONDUCTION-BAND OFFSETS IN PSEUDOMORPHIC INXGA1-XAS/AL0.2GA0.8AS QUANTUM WELLS (0.07 LESS-THAN-OR-EQUAL-TO 0.18) MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：98

作者：

DEBBAR, N

BISWAS, D

BHATTACHARYA, P

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.40.1058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：1058 / 1063

页数：6

相关论文

共 13 条

[1] LATTICE MISMATCH AND BAND OFFSETS IN STRAINED LAYERS
COON, DD
LIU, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2893 - 2896
[2] CARRIER DYNAMICS IN QUANTUM-WELLS BEHAVING AS GIANT TRAPS
DEBBAR, N
BHATTACHARYA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3845 - 3847
[3] DEEP LEVELS IN AS-GROWN AND SI-IMPLANTED IN0.2GA0.8AS-GAAS STRAINED-LAYER SUPERLATTICE OPTICAL GUIDING STRUCTURES
DHAR, S
DAS, U
BHATTACHARYA, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 639 - 642
[4] A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DHAR, S
HONG, WP
BHATTACHARYA, PK
NASHIMOTO, Y
JUANG, FY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 698 - 706
[5] HAMILTON B, 1986, 12TH P INT S GALL RE, P241
[6] HIKOSAKA K, 1981, 8TH P INT S GALL ARS, P233
[7] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS)
KOWALCZYK, SP
SCHAFFER, WJ
KRAUT, EA
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708
[8] Lang D.V., 1987, HETEROJUNCTION BAND
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] TRANSIENT CAPACITANCE SPECTROSCOPY ON LARGE QUANTUM WELL HETEROSTRUCTURES
MARTIN, PA
MEEHAN, K
GAVRILOVIC, P
HESS, K
HOLONYAK, N
COLEMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4689 - 4691