A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

DHAR, S ^{[1
]}

HONG, WP ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

NASHIMOTO, Y ^{[1
]}

JUANG, FY ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：698 / 706

页数：9

共 36 条

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[2] BHATTACHARYA PK, 1979, I PHYS C SER, V45, P199
[3] BERYLLIUM AND SILICON DOPING STUDIES IN ALXGA1-XAS AND NEW RESULTS ON PERSISTENT PHOTOCONDUCTIVITY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 644 - 648
[4] EFFECT OF TRAPS ON LOW-TEMPERATURE HIGH ELECTRON-MOBILITY TRANSISTOR CHARACTERISTICS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 381 - 384
[5] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES
FISCHER, R
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1028 - 1032
[6] PHOTOIONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS WITH NON-PARABOLIC BANDS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (16): : 2615 - 2626
[7] PHOTOLUMINESCENCE EXCITATION OF SAXENA DEEP DONOR IN ALGAAS
HENNING, JCM
ANSEMS, JPM
DENIJS, AGM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34): : L915 - L921
[8] HIKOSAKA K, 1982, I PHYS C SER, V63, P233
[9] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES
HUANG, K
RHYS, A
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423
[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF NEAR-IDEAL GAAS-ALXGA1-XAS SINGLE QUANTUM WELLS
JUANG, FY
NASHIMOTO, Y
BHATTACHARYA, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1986 - 1989

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