BERYLLIUM AND SILICON DOPING STUDIES IN ALXGA1-XAS AND NEW RESULTS ON PERSISTENT PHOTOCONDUCTIVITY

被引：23

作者：

CHAND, N ^{[1
]}

FISCHER, R ^{[1
]}

KLEM, J ^{[1
]}

HENDERSON, T ^{[1
]}

PEARAH, P ^{[1
]}

MASSELINK, WT ^{[1
]}

CHANG, YC ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：644 / 648

页数：5

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