COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS

被引：364

作者：

CHAND, N ^{[1
]}

HENDERSON, T ^{[1
]}

KLEM, J ^{[1
]}

MASSELINK, WT ^{[1
]}

FISCHER, R ^{[1
]}

CHANG, YC ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4481

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4481 / 4492

页数：12

共 32 条

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[9] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
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[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[10] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 957 - 960

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