BERYLLIUM AND ZINC BEHAVIOR IN GAAS AND GAALAS FOR HIGH-CONCENTRATION SOLAR-CELLS

被引:5
作者
FLORES, C
PASSONI, D
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D O I
10.1016/0038-1101(80)90110-0
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:911 / 913
页数:3
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共 7 条
[1]  
[Anonymous], 1977, SEMICONDUCTOR LASERS
[2]  
ELLIOT, 1965, CONSTITUTION BINARY
[3]  
FANETTI E, 1979, 2ND EC PHOT SOL EN C
[4]   GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS [J].
HOVEL, HJ ;
WOODALL, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1246-1252
[5]   THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].
PETRITZ, RL .
PHYSICAL REVIEW, 1958, 110 (06) :1254-1262
[6]  
POLTORATSKII EA, 1966, SOV PHYS-SOLID STATE, V8, P770
[7]   TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].
SPRINGTHORPE, AJ ;
KING, FD ;
BECKE, A .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118