MOLECULAR-BEAM EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF NEAR-IDEAL GAAS-ALXGA1-XAS SINGLE QUANTUM WELLS

被引：34

作者：

JUANG, FY

NASHIMOTO, Y

BHATTACHARYA, PK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1986 / 1989

页数：4

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[1] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS
BASTARD, G
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MEYNADIER, MH
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[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7042 - 7044
[2] PHOTOLUMINESCENCE OF GAAS SINGLE QUANTUM WELLS CONFINED BY SHORT-PERIOD ALL-BINARY GAAS/ALAS SUPERLATTICES
FUJIWARA, K
PLOOG, K
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1222 - 1224
[3] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1489 - 1492
[4] ELECTRONIC STATE LOCALIZATION IN SEMICONDUCTOR SUPERLATTICES
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NISHI, K
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 98 - 100
[5] EFFECT OF SUBSTRATE ANNEALING AND V-III FLUX RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS-GAAS SINGLE QUANTUM WELLS
MAKI, PA
PALMATEER, SC
WICKS, GW
EASTMAN, LF
CALAWA, AR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 1051 - 1063
[6] ENHANCED LUMINESCENCE FROM ALGAAS/GAAS SINGLE QUANTUM WELL STRUCTURES THROUGH IMPROVED INTERFACES
MASSELINK, WT
SUN, YL
FISCHER, R
DRUMMOND, TJ
CHANG, YC
KLEIN, MV
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 117 - 122
[7] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7085 - 7087
[8] NEW TRANSITIONS IN THE PHOTO-LUMINESCENCE OF GAAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
MUNTEANU, O
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 1 - 3
[9] SHARP-LINE PHOTOLUMINESCENCE SPECTRA FROM GAAS-GAALAS MULTIPLE-QUANTUM-WELL STRUCTURES
REYNOLDS, DC
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YU, PW
MASSELINK, WT
FISCHER, R
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7038 - 7041
[10] ROLE OF RESONANT LASER ENHANCED SURFACE KINETICS IN THE LOW SUBSTRATE-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH OF COMPOUND SEMICONDUCTORS - A MONTE-CARLO STUDY
SINGH, J
BAJAJ, KK
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 577 - 579