ENHANCED LUMINESCENCE FROM ALGAAS/GAAS SINGLE QUANTUM WELL STRUCTURES THROUGH IMPROVED INTERFACES

被引：24

作者：

MASSELINK, WT

SUN, YL

FISCHER, R

DRUMMOND, TJ

CHANG, YC

KLEIN, MV

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.582929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 122

页数：6

共 11 条

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[4]

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[6] BINDING-ENERGIES OF ACCEPTORS IN GAAS-ALXGA1-XAS QUANTUM WELLS [J].

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CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1983, 28 (12) :7373-7376

[7] PHOTO-LUMINESCENCE STUDY OF THE INCORPORATION OF SILICON IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

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[9] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS [J].

MILLER, RC ;

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TSANG, WT .

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[10] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

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ELECTRONICS LETTERS, 1980, 16 (19) :753-754

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