EFFECT OF SUBSTRATE ANNEALING AND V-III FLUX RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS-GAAS SINGLE QUANTUM WELLS

被引:17
作者
MAKI, PA [1 ]
PALMATEER, SC [1 ]
WICKS, GW [1 ]
EASTMAN, LF [1 ]
CALAWA, AR [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1007/BF02654974
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1051 / 1063
页数:13
相关论文
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